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DMV1500M
DAMPER + MODULATION DIODE FOR VIDEO
DAMPER
MODULATION
MAIN PRODUCT CHARACTERISTICS MODUL IF(AV) VRRM trr (max) VF (max) 3A 600 V 50 ns 1.4 V DAMPER 6A 1500 V 135 ns 1.65 V
1 2 3
1
2
3
FEATURES AND BENEFITS
s s s s s
Insulated TO-220AB (Bending option F5 available)
s
s
s
Full kit in one package High breakdown voltage capability Very fast recovery diode Specified turn on switching characteristics Low static and peak forward voltage drop for low dissipation Insulated version: Insulated voltage = 2500 VRMS Capacitance = 7 pF Planar technology allowing high quality and best electrical characteristics Outstanding performance of well proven DTV as damper and new faster Turbo 2 600V technology as modulation
DESCRIPTION High voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with E/W correction. The insulated TO-220AB package includes both the DAMPER diode and the MODULATION diode. Assembled on automated line, it offers excellent insulating and dissipating characteristics, thanks to the internal ceramic insulation layer.
ABSOLUTE RATINGS (limiting values, per diode) Value Symbol VRRM IFSM Tstg Tj Parameter MODUL DAMPER Repetitive peak reverse voltage Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal 600 35 1500 75 V A C Unit
- 40 to + 150 150
July 2001 - Ed: 6A
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THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-c) Damper junction to case Modulation junction to case Parameter Value 4.8 6 Unit C/W
STATIC ELECTRICAL CHARACTERISTICS OF THE DAMPER DIODES Value Symbol Parameter Test conditions Tj = 25C Typ. VF * IR **
Pulse test :
Tj = 125C Typ. 1.2 100 Max. 1.65 1000
Unit
Max. 2.2 100
Forward voltage drop Reverse leakage current
* tp = 380 s, < 2% **tp = 5 ms, < 2%
IF = 6 A VR = 1500V
1.4
V A
To evaluate the maximum conduction losses of the DAMPER diode use the following equations : 2 P = 1.37 x IF(AV) + 0.047 x IF (RMS)
STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE Value Symbol VF * IR **
Pulse test :
Parameter Forward voltage drop Reverse leakage current
* tp = 380 s, < 2% ** tp = 5 ms, < 2%
Test conditions IF = 3A VR = 600V
Tj = 25C Typ. Max. 1.8 20
Tj = 125C Typ. 1.1 3 Max. 1.4 50
Unit V A
To evaluate the maximum conduction losses of the MODULATION diode use the following equations : 2 P = 1.12 x IF(AV) + 0.092 x IF (RMS)
RECOVERY CHARACTERISTICS OF THE DAMPER DIODE Symbol trr Parameter Reverse recovery time Test conditions IF = 100mA IR = 100mA IRR = 10mA IF = 1A dIF/dt = -50A/s VR = 30V Tj = 25C Value Typ. 750 Max. Unit ns
trr
Reverse recovery time
Tj = 25C
110
135
ns
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DMV1500M
RECOVERY CHARACTERISTICS OF THE MODULATION DIODE Symbol trr Parameter Reverse recovery time Test conditions IF = 100mA IR = 100mA IRR = 10mA IF = 1A dIF/dt = -50A/s VR = 30V Tj = 25C Value Typ. 110 Max. 350 Unit ns
trr
Reverse recovery time
Tj = 25C
50
ns
TURN-ON SWITCHING CHARACTERISTICS OF THE DAMPER DIODE Symbol tfr Parameter Forward recovery time Test conditions IF = 6A dIF/dt = 80A/s VFR = 3V IF = 6A dIF/dt = 80A/s Tj = 100C Value Typ. 570 Max. Unit ns
VFP
Peak forward voltage
Tj = 100C
21
28
V
TURN-ON SWITCHING CHARACTERISTICS OF THE MODULATION DIODE Symbol tfr Parameter Forward recovery time Test conditions IF = 3A dIF/dt = 80A/s VFR = 2V IF = 3A dIF/dt = 80A/s Tj = 100C Value Typ. Max. 240 Unit ns
VFP
Peak forward voltage
Tj = 100C
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V
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Fig. 1-1: Power dissipation versus peak forward current (triangular waveform, = 0.45) (damper diode).
PF(av)(W) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
Fig. 1-2: Power dissipation versus peak forward current (triangular waveform, = 0.45) (modulation diode).
PF(av)(W) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
Ip(A) 0 1 2 3 4 5 6
Ip(A) 0 1 2 3 4 5 6
Fig. 2-1: Average forward current versus ambient temperature (damper diode).
Fig. 2-2: Average forward current versus ambient temperature (modulation diode).
IF(av)(A) 8 7
Rth(j-a)=Rth(j-c)
IF(av)(A) 4.0 3.5
Rth(j-a)=Rth(j-c)
6 5 4 3 2 1 0 0
=tp/T
T
3.0 2.5 2.0 1.5 1.0
tp T
Tamb(C) 50 75 100 125 150
0.5 0.0 0
=tp/T
tp
Tamb(C) 50 75 100 125 150
25
25
Fig. 3-1: Forward voltage drop versus forward current (damper diode).
Fig. 3-2: Forward voltage drop versus forward current (modulation diode).
IFM(A) 15.0
Typical Tj=125C
10.0
Maximum Tj=125C
Maximum Tj=25C
5.0 VFM(V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
IFM(A) 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0
Typical Tj=125C
Maximum Tj=125C
Maximum Tj=25C
VFM(V)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
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Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 5-1: Non repetitive surge peak forward current versus overload duration (damper diode).
K=[Zth(j-c)/Rth(j-c)] 1.0
= 0.5
IM(A) 40 35 30 25 20 15
T
Tc=100C
0.5
= 0.2 = 0.1
0.2
Single pulse
10
tp
IM t
tp(s) 0.1 1E-3 1E-2 1E-1
=tp/T
5 0 1E-3
=0.5
t(s) 1E-2 1E-1 1E+0
1E+0
Fig. 5-2: Non repetitive surge peak forward current versus overload duration (modulation diode).
Fig. 6-1: Reverse recovery charges versus dIF/dt (damper diode).
IM(A) 30 25 20 15 10 5
IM t
Tc=100C
0 1E-3
=0.5
t(s) 1E-2 1E-1 1E+0
Qrr(nc) 1000 IF= 6A 900 90% confidence Tj=125C 800 700 600 500 400 300 200 100 0 0.1 0.2
dIF/dt(A/s) 0.5 1.0 2.0 5.0
Fig. 6-2: Reverse recovery charges versus dIF/dt (modulation diode).
Fig. 7-1: Reverse recovery current versus dIF/dt (damper diode).
Qrr(nC) 200
IF= 3A 90% confidence Tj=125C
IRM(A) 2.0 IF= 6A 1.8 90% confidence Tj=125C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 0.2
150 100 50 dIF/dt(A/s) 0 0.1 1.0 10.0 100.0
dIF/dt(A/s) 0.5 1.0 2.0 5.0
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Fig. 7-2: Reverse recovery current versus dIF/dt (modulation diode). Fig. 8-1: Transient peak forward voltage versus dIF/dt (damper diode).
IRM(A) 6 5 4 3 2 1 dIF/dt(A/s) 0 1 10 100 200
IF= 3A 90% confidence Tj=125C
VFP(V) 40 35 30 25 20 15 10 5 0 0 20 40 dIF/dt(A/s) 60 80 100 120 140
IF= 6A 90% confidence Tj=125C
Fig. 8-2: Transient peak forward voltage versus dIF/dt (modulation diode).
Fig. 9-1: Forward recovery time versus dIF/dt (damper diode).
VFP(V) 12 11 10 9 8 7 6 5 4 3 2 1 0
IF= 3A 90% confidence Tj=125C
tfr(ns) 800 750 700 650 600 550 500 450 400 0 20 40
IF= 6A 90% confidence Tj=125C VFR=3V
dIF/dt(A/s) 0 20 40 60 80 100 120 140 160 180 200
dIF/dt(A/s) 60 80 100 120 140
Fig. 9-2: Forward recovery time versus dIF/dt (modulation diode).
Fig. 10: Dynamic parameters versus junction temperature (damper & modulation diodes).
tfr(ns) 200 175 150 125 100 75 50 25 0 0 20 40 60 dIF/dt(A/s) 80 100 120 140 160 180 200
IF=IF(av) 90% confidence Tj=125C Vfr=2V
VFP,IRM,Qrr[Tj]/VFP,IRM,Qrr[Tj=125C] 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0
VFP
IRM
Qrr
Tj(C) 20 40 60 80 100 120 140
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Fig. 11: Junction capacitance versus reverse voltage applied (typical values) (damper & modulation diodes).
C(pF) 100
Tj=25C F=1MHz
10
VR(V) 1 1 10 100 200
ORDERING INFORMATION
DMV1500M
/
F5
LEAD BENDING (OPTION)
DAMPER AND MODULATION DIODES FOR VIDEO
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PACKAGE MECHANICAL DATA TO-220AB F5 OPTION DIMENSIONS REF. A
B b2
Millimeters Min. 15.20 24.16 1.65 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 2.65 1.14 1.14 15.80 2.92 Max. 15.90 26.90 2.41 10.40 0.88 1.32 4.60 0.70 2.72 2.70 6.60 3.85 2.95 1.70 1.70 16.80 3.30
Inches Min. 0.598 0.951 0.064 0.393 0.024 0.048 0.173 0.019 0.094 0.094 0.244 0.147 0.104 0.044 0.044 0.622 0.114 Max. 0.625 1.059 0.094 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.116 0.066 0.066 0.661 0.129
a1
C
a3 B b1 b2 C c1 c2
c2 R2 a3 R1
L F
OI
A l4
a1
e F I L
l3 l2
c2 b1 e M1
c1
I2 l3 l4 M1 R1 R2
16.40 typ. 1.40 typ. 1.40 typ.
0.645 typ. 0.055 typ. 0.055 typ.
PRINTED CIRCUIT LAYOUT FOR F5 LAYOUT
s s s
Cooling method: by conduction (c) Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N.
1mm
3.1mm 2.2mm
2.54mm
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PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF.
B C
Millimeters Min. Typ. Max. Min. 15.90 0.598 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 2.65 1.14 1.14 2.60 14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 2.70 0.094 6.60 0.244 3.85 0.147 2.95 0.104 1.70 0.044 1.70 0.044 15.20
Inches Typ. Max. 0.625 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.116 0.066 0.066 0.102
b2
A
L F I A
a1 a2 B b1 b2 C c1
l4
a1
c2
c2 e F I I4 L
c1
l3
l2 a2
15.80 16.40 16.80 0.622 0.646 0.661
b1 e
M
l2 l3 M
s s s
Cooling method: by conduction (c) Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N.
Type DMV1500M DMV1500MF5
s
Marking DMV1500M
Package TO-220AB
Weight 2.2 g.
Base qty 50
Delivery mode Tube
Epoxy meets UL94, V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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